IXFC30N60P mosfet equivalent, polarhv hiperfet power mosfet.
z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) App.
z DC-DC converters
z z z z
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(o.
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